| 摘要 |
<p>PURPOSE: To provide a method for removing a lower resist pattern without damaging an etched layer at the time of generating a defect at the lower resist pattern formed by a multilayer resist method with an intermediate layer. CONSTITUTION: A method for removing the lower resist pattern of a multilayer resist with an intermediate layer for reoperating at the time of wrongly forming a lower resist pattern on the upper part of an etched layer 3 for forming a pattern is provided with a step of applying a new resist layer 11 to the exposed part of the etched layer be covering, a step of removing the new resist layer by a prescribed thickness to expose the boundary face of the intermediate layer 7 and the lower resist pattern, a step of removing the layer 7, and a step of removing the residual layer 11 and the lower resist pattern 5.</p> |
