| 摘要 |
PURPOSE:To reduce a stress applied to wirings by the expansion and contraction of a resin sealing a semiconductor element by forming second wirings on a second insulating film on a semiconductor substrate and an interlayer substance between the wirings and coating the second wirings and the upper section of the interlayer substance with a third insulating film and a metallic film. CONSTITUTION:A semiconductor substrate 1 with a first insulating film 2, first wirings 3 shaped onto the first insulating film 2, a second insulating film 4 formed to the first wirings 3 and the upper section of the first insulating film 2, second wirings 6 shaped onto the second insulating film 4, interlayer substances 5 formed on the second insulating film 4 and between the second wirings 6, third insulating films 7 shaped to the interlayer substances 5 and the upper sections of the second wirings 6, and metallic films 8 formed onto the third insulating films 7 are included. Said interlayer substances 5 are formed by aluminum not connected to anywhere in a potential manner or by using a polyimide resin when electrostatic capacitance between the wirings is reduced.
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