| 摘要 |
<p>PURPOSE:To obtain the InSb1-xAsx thin film extremely easily and moreover having the arbitrary atom ratio of arsenic by a method wherein antimony is evaporated on a substrate at the atom arrival speed smaller than that of indium, and arsenic only or arsenic and indium are evaporated at the same time thereon. CONSTITUTION:The film of indium (In) and antimony (Sb) is formed on the surface of the substrate in the condition that the atom arrival speed ratio (ASb/ AIn) thereof to the substrate is less than 1, and then arsenic (As) or As and In are evaporated making the total of the atom ratio of (As+Sb) to In as to become 1 or more to obtain the InSb1-xAsx thin film. The value of x at the thin film mentioned above can be controlled covering a wide range. For example, when x is 0.4 or less, In and Sb are evaporated on the substrate at first making the atom arrival speed ratio (ASb/AIn) as to become 0.6-0.9 (1/1.7-1/1.1), for example, and then to evaporate As making the atom ratio of (As+Sb) to In as to be 1.0 or more is favorable.</p> |
