NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PURPOSE:To provide an EEPROM having a simple peripheral circuit and a high integration. CONSTITUTION:A bit line selecting transistor QBL is provided between an end of a bit line BL of an EEPROM memory cell array 21 having memory transistors and selecting gate transistors and a bit line driver 22, and a bit line undesired to be written is set to a floating state by controlling ON, OFF the transistor QBL at the time of writing data.