MANUFACTURE OF FIELD EMISSION DISPLAY

摘要

PURPOSE: A method for manufacturing silicon tip field emitter is provided to reduce gate voltage, increase electron emission density and improve uniformity of emission by coating silicide using salicide process to be able to keep self-aligned structure at the surface of silicon tip. CONSTITUTION: A diffusion layer(201) is formed by injecting and then diffusing phosphorous ion as N type dopant on the top of P type silicon wafer. Silicon oxidation film mask is formed on above the top of diffusion layer(201). Cathode electrode(202) and tip are formed by making an isotropic etching diffusion layer(201) of above lower part of mask with ion etching method. Above tip surface is formed sharply by sharpening oxidation process. Insulation layer and gate electrode(206) are formed in orders at above cathode electrode(202) exposed and on the top of silicon oxidation film. Silicon oxidation film on the top of tip is removed. Metal(207) to be used as material of silicide(208) on the top of above gate electrode(206) and tip emitter is deposited. Silicide(208) is formed at the surface of tip emitter. Metal(207) not to be reacted with the upper part of gate electrode(206) and silicide(208) is removed.