| 摘要 |
PURPOSE:To obtain a silicon carbide member being suitable for heat processing of a semiconductor and having extremely high cleanliness in a surface by specifying iron content of powdery abrasive grains for blast processing on a surface of a silicon carbide sintered body. CONSTITUTION:For example, a silicon carbide powder (GC grade, number 60) on the market is immersed in a solution formed by mixing HF, HNO3 and H2O at a ratio of 1:1:1 in vol. and processed for cleaning. After extracting acids, the powder is enough washed with pure water to obtain high purity silicon carbide powdery abrasive grains having <=50ppm iron content. When the surface of the silicon carbide sintered body is processed by blast with the silicon carbide powdery abrasive grains having thus reduced iron content, contamination caused by iron brought out from abrasive grains is prevented and the silicon carbide member being extremely high in cleanliness of the surface is obtained. |
