| 摘要 |
Neural nets using capacitive structures are adapted for construction in complementary metal-oxide-semiconductor integrated-circuit technology. In each neural net layer synapse input signals are applied to the inverting and non-inverting input terminals of each of a plurality of differential-input non-linear amplifiers by a respective pair of capacitors, which non-linear amplifiers generate respective axon responses. In certain of these neural nets, arrangements are described that make the capacitive structures bilaterally responsive, so that back-propagation calculations can be performed to alter the relative values of capacitors in each pair thereof, which is done during training of certain of the neural nets described.
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