| 摘要 |
1,156,997. Semi-conductor devices. BROWN, BOVERI & CO. Ltd. 19 Oct., 1966 [21 Oct., 1965], No. 46740/66. Heading H1K. A coated electrode of an N + NPP + or N + NP semi-conductor device comprises at least one metallic insert embedded in the semiconductor material. In the illustrated embodiment grid-like metallic inserts 6, 7 are embedded in a high-resistivity N-type region 3 of an N + NP rectifier. With electrodes 4, 5 connected as cathode and anode respectively the device is conductive if the grid 6 nearer to the cathode is biased positively relative to the grid 7, and is non-conducting if the grids are biased in the reverse sense. The wires of the grid may, in the case of a silicon wafer, be insulated with silicon oxide, or may alternatively be surrounded by P-type material in a generally N-type layer. In a second embodiment the grid 7 is dispensed with. Two grids (6, 7), Fig. 3 (not shown), may be provided one on each side of the PN junction in a P + PNN + device. |
