| 摘要 |
1,133,830. Semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 24 May, 1967 [25 May, 1966], No. 24243/67. Heading H1K. A pressure sensitive semi-conductor device is produced by providing a layer of a deep level impurity on the surface of a body of semiconductor material, irradiating the body, then thermally diffusing the impurity into the body and providing electrical connections. The sensitivity of the device increases with the dose of radiation until a peak value is reached, Fig. 2 (not shown). As shown, Fig. 1, a layer 12 of copper is plated on to a silicon body 11 which is then irradiated using an electron beam. The body is then heated in hydrogen to diffuse-in the copper, and gold (containing antimony) is alloyed to the body to form electrodes 13. The deep level impurity may be gold, copper, cobalt, nickel, iron or zinc if the semi-conductor material is silicon or germanium; the electrodes may form ohmic or non ohmic contacts; the irradiation may also be by means of a neutron beam, and may be applied to one side only of the device. The use of GaAs or GaP as the semi-conductor material is also mentioned. |
