发明名称 Vapour deposition chamber - with variable profile flat susceptor
摘要 <p>Device for deposition of inorganic materials pref. semiconductors materials on like type materials is effected by vapour deposition in a double walled cylindrical chamber, which is surrounded by an induction coil, which heats a flat susceptor plate in the horizontal chamber, on which the workpieices are placed and heated up, the reaction gases passing axially through the chamber. For even heat distribution the susceptor plates have reducing thickness towards their axies. This may be effected either by a curve reduction or in steps. The discs may be fitted into pockets on the otherwise flat surface suseceptors and the coil spacing may be varied to produce even heating.</p>
申请公布号 DE2034152(A1) 申请公布日期 1972.01.13
申请号 DE19702034152 申请日期 1970.07.09
申请人 SIEMENS AG 发明人
分类号 F27B17/02;F27B19/00;F27D11/06;H05B6/02;(IPC1-7):23C11/08 主分类号 F27B17/02
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