| 摘要 |
A method of forming aluminum nitride single crystals of large area and silicon carbide-aluminum nitride heterojunctions using a modified Lely method. Aluminum nitride is introduced, as a vapor phase, into a furnace containing a plate-shaped monocrystal of silicon carbide at a temperature between 1800 DEG and 2300 DEG C. At those temperatures, aluminum nitride recrystallizes and condenses to deposit epitaxially on the silicon carbide. If the silicon carbide is of one conductivity type, the aluminum nitride can be suitably doped to be of the opposite conductivity type whereby a heterojunction is formed.
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