发明名称 HIGH DENSITY SINTERED TARGET MATERIAL FOR FORMING ELECTRIC CONDUCTIVE TRANSPARENT THIN FILM BY SPUTTERING
摘要 PURPOSE:To increase the density of a sintered target material for forming an electric conductive transparent thin film by sputtering. CONSTITUTION:This target material for forming an electric conductive transparent thin film by sputtering is made of a high density sintered body having >=90% theoretical density ratio and a compsn. consisting of 5-15wt.% SnO2, 0.01-5wt.% ZrO2 and/or Y2O3 and the balance In2O3 with inevitable impurities.
申请公布号 JPH0570942(A) 申请公布日期 1993.03.23
申请号 JP19910259903 申请日期 1991.09.11
申请人 MITSUBISHI MATERIALS CORP 发明人 MACHINO TAKESHI;OUCHI YUKIHIRO;TAKAHASHI AKIO;SUGIHARA TADASHI;TAKESHITA TAKUO
分类号 C01G19/00;C01G25/00;C04B35/00;C23C14/08;C23C14/34;H01B13/00 主分类号 C01G19/00
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