| 发明名称 |
GALLIUM-ARSENIDE SCHOTTKY BARRIER TYPE SEMICONDUCTOR DEVICE |
| 摘要 |
A Shottky barrier diode includes a GaAs epitaxial wafer. A Pt-Ni alloy is used as the contact metal to form the Schottky barrier, and an additional alloy layer is formed in the boundary between the Pt-Nl alloy and the GaAs wafer to increase the bonding strength between the wafer and the alloy.
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| 申请公布号 |
US3699408(A) |
申请公布日期 |
1972.10.17 |
| 申请号 |
USD3699408 |
申请日期 |
1971.01.20 |
| 申请人 |
NIPPON ELECTRIC CO. LTD. |
发明人 |
DAIZABURO SHINODA;MASAOKI ISHIKAWA |
| 分类号 |
H01L29/872;(IPC1-7):H01L3/20 |
主分类号 |
H01L29/872 |
| 代理机构 |
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