| 摘要 |
PURPOSE:To inhibit the increase of junction capacitance by a PN junction guard ring layer by introducing an impurity through a narrow gap between a barrier metal formed to the surface of a semiconductor and the peripheral insulating film and shaping the guard ring layer. CONSTITUTION:The barrier metal layer 4 is formed to one part of the surface of an N type Si substrate and the insulating film (a SiO2 film) 3 around the layer 4. The impurity is introduced to the surface of the semiconductor through the narrow gap 6 between the barrier metal layer 4 and the insulating film 3. Consequently, the guard ring P layer 2, the width d of a ring thereof is extremely thin, is shaped. Accordingly, the area of the guard ring layer 2 can be inhibited to the irreducible minimum of a demand, and the increase of junction capacitance by the guard ring layer can be suppressed. |
