| 摘要 |
PURPOSE:To improve the etching resistance of a mask by a method wherein an organic film which can be easily formed and removed as the resist is used as a mask, together with the resist which is digested during an etching. CONSTITUTION:An Al film 2 is formed by a resistance heating on an electric insulation film 1 represented by an Si oxide film, and the organic film 6 and the resist 3 are formed thereon by a spin-coating. Next, the pattern of the resist 3 is formed after exposure and development, and thus the patterning of the organic film 6 is performed. Then, the Al film 2 is etched by using the pattern of the resist 3, and thereafter the organic film 6 is removed together with the resist 3. |
