| 摘要 |
PURPOSE:To provide a reliable LED device with an enhanced productive yield, by forming upper and lower diffusion masks at the light emitting part in such a way that an end part of the upper diffusion mask, located on the side of an electrode, is formed not higher than an upper end part of the lower diffusion mask so that a disconnection of an electrode is not caused by an undercut part. CONSTITUTION:A first insulating film 1 as an opening mask for a light emitting part is formed on a semiconductor substrate. A secondary insulating film 2 is formed thereon, and an opening part is opened in the secondary insulating film 2. Then, in the first insulating film 1, an opening part is formed in such a way that an end part of the second insulating film 2, located near an electrode 8 connected to the light emitting part, is formed not higher than an upper end part of the insulating film 1. An impurity diffusion step is carried out for the exposed semiconductor substrate in the opening part so that a light emitting part is formed. The end of the light emitting part of the double-layered diffusion mask on the electrode side is formed like steps in shape, which prevents an intrusive etchant from coming into an under cut part. Consequently, the electrode disconnection can be prevented. |
