| 摘要 |
PURPOSE:To make the thickness thin and to improve breakdown strength property, by constituting an insulating layer with a thin film of an aromatic group having a monomolecular alignment structure. CONSTITUTION:A semiconductor member 1, on which n-type regions 2a and 2b, insulating layers 3a and 3c, a drain electrode 4a and a source electrode 4c are formed, is prepared beforehand. A monomolecular film, whose thickness is uniformly determined by the structure of an aromatic ring of, e.g., a polyimide thin film 6, is deposited on the surface of the semiconductor member 1. Then the film is removed, with a part, where gate electrode 4b is to be formed, being made to remain. Thereafter, the gate electrode 4b is evaporated on the polyimide thin film 6. Thus the dielectric breakdown strength of the gate insulating film becomes high. Therefore the thickness of the element can be made thin. |
