发明名称 |
A METHOD OF FORMING A SEMICONDUCTOR DEVICE USING A MASK |
摘要 |
<p>A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask.
<??>Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.</p> |
申请公布号 |
EP0179196(B1) |
申请公布日期 |
1989.01.04 |
申请号 |
EP19850107231 |
申请日期 |
1985.06.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FANG, FRANK FU;GROSSMAN, BERTRAND M.;HWANG, WEI |
分类号 |
H01L29/78;H01L21/033;H01L21/265;H01L21/28;H01L21/336;H01L29/423;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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