| 摘要 |
PROBLEM TO BE SOLVED: To enable accurate temp. calibration and make the growth temp. of a semiconductor film controllable at a high reproducibility by measuring the temp. relation between a heater and susceptor, using the susceptor having a plurality of concentric grooves, and depositing the semiconductor film on a substrate, using a susceptor having a plurality of recesses. SOLUTION: A temp. calibrating susceptor 1 is approximately the same as a semiconductor film depositing susceptor but has a plurality of concentric grooves 2 on its one main surface. After the relation between a feed current to a resistance heating type heater and temp. of the susceptor 1 has been measured, using the temp. calibrating susceptor 1 having such concentric grooves 2, a semiconductor film depositing substrate is mounted on the semiconductor film depositing susceptor to form a semiconductor film on this substrate. The semiconductor film depositing susceptor is made of carbon, etc., and coated with graphite, etc., on the surface and has a plurality of recesses so that a plurality of substrates can be set. |
