发明名称 Verfahren zur gekippten und parallel Ausrichtung von Flussigkristall
摘要 An untreated substrate (42) is treated prior to use to induce a near-parallel orientation of a liquid crystal director relative to the untreated substrate (42). A layer (44) of silica is deposited on the untreated substrate (42) by in-line magnetron sputtering as the untreated substrate (42) is moved past the sputtering target, and the silica-coated substrate (42) is thereafter treated with an alcohol. The alcohol-treated substrate (20) is covered with a layer of the liquid crystal. <IMAGE>
申请公布号 DE69419071(T2) 申请公布日期 2000.02.10
申请号 DE1994619071T 申请日期 1994.05.18
申请人 HUGHES ELECTRONICS CORP., EL SEGUNDO 发明人 SMITH JR., WILLIS H.;MILLER, LEROY J.
分类号 G02F1/13;G02F1/1333;G02F1/1337;(IPC1-7):G02F1/133 主分类号 G02F1/13
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