发明名称 |
CIRCUIT CONFIGURATION FOR PROTECTING INTEGRATED CIRCUIT |
摘要 |
As protection against destruction in the case of electrostatic discharges (ESD), semiconductor chips must have protection circuits (PC). Normally, a diode (D) is used between the supply potential connections (VSS, VCC) and ESD protection circuits. A protection circuit between a circuit connection (P) and a supply potential line (L2) does not provide complete protection since the line resistances, in conjunction with parasitic capacitances, produce high voltage peaks in the case of extended line lengths. The invention therefore proposes to connect a discharging element (SD) between the supply potential lines (L1, L2) at each circuit connection (P). <IMAGE> |
申请公布号 |
KR100261256(B1) |
申请公布日期 |
2000.07.01 |
申请号 |
KR19920019873 |
申请日期 |
1992.10.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TRUTSKI, HARTNUT;NIKUTA, VOLFGANG |
分类号 |
H01L23/60;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/092;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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