发明名称 |
Semiconductor device structured to prevent oxide damage during HDP CVD |
摘要 |
A semiconductor device includes a patterned conductive layer on which an initial dielectric film is deposited by a non-etching deposition process. A second dielectric film is then deposited on the initial dielectric film by high-density plasma chemical vapor deposition (HDP CVD). The HDP CVD process etches the second dielectric film as it is being deposited, thereby smoothing the surface of the second dielectric film. The initial dielectric film insulates the patterned conductive layer from the plasma used in the HDP CVD process, so that plasma charge is not conducted to underlying oxide films, such as gate oxide films, and does not cause oxide damage. |
申请公布号 |
US6806208(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030384578 |
申请日期 |
2003.03.11 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SAITO MINORU |
分类号 |
H01L21/31;H01L21/316;H01L21/318;H01L21/336;H01L21/8234;H01L23/31;H01L23/52;H01L23/532;H01L23/58;H01L29/94;H01L31/113;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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