| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of increasing a driving current of a MISFET. SOLUTION: A semiconductor layer 4 becoming a channel area of an n channel type MISFET is formed on the principal surface of a first SOI substrate, and a gate electrode member 7A is formed on the upper surface and side surfaces of the semiconductor layer 4. Thereafter, an n-type semiconductor area becoming a source and a drain of the n-channel type MISFET is formed on a part of the semiconductor layer 4, and the semiconductor layer 4 and the gate electrode member 7A are covered with an insulating film 8. Further, the first SOI substrate and the substrate 10 are stuck to each other by opposing the insulating film 8 and the insulating film 11 formed on the surface of the substrate 10 to each other, and then the support substrate of the first SOI substrate is removed. Thereafter, a gate electrode member 19A electrically connected with the gate electrode member 7A is formed on the semiconductor layer 4 and the gate electrode member 7A. COPYRIGHT: (C)2005,JPO&NCIPI
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