| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be further microminiaturized by reducing an occupying area of an element. SOLUTION: A method for manufacturing the semiconductor device includes a step of forming an n-type well 13 on a surface region of an Si substrate 12, forming p-type first semiconductor regions 17a, 18a on the surface region of the well 13, and separating the first semiconductor regions 17a, 18a by an element isolation region 11. In a region under the element isolation region 11 in the well 13, a p-type second semiconductor region 24a is formed. The method further includes a step of providing a contact hole provided in an interlayer insulating film 26 part on the first semiconductor regions 17a, 18a, connecting first contacts 21a, 22a to the first semiconductor regions 17a, 18a, providing a contact hole in the element isolation region 11 and the interlayer insulating film 26 part on the second semiconductor region 24a, and connecting the second contact 25a to the second semiconductor region 24a. COPYRIGHT: (C)2005,JPO&NCIPI
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