发明名称 Tantalum disilicide based material
摘要 <p>The Ta disilicide which contains 66.6% Si is prepared by melting pure Ta and Si in an electric arc furnace under a pure protective gas atmosphere, especially pure Ar, the pressure of which is lower than the atm. press., pref. 400 mm Hg.</p>
申请公布号 DE1965623(A1) 申请公布日期 1971.07.22
申请号 DE19691965623 申请日期 1969.12.30
申请人 W.C. HERAEUS GMBH 发明人
分类号 C22C1/02;C22C27/02;C22C28/00 主分类号 C22C1/02
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