| 摘要 |
PURPOSE:To facilitate manufacture while stabilizing the characteristics by formming a gate electrode and a wiring in double layer structure of polycrystalline Si and Al directly applied to the polycrystalline Si when the gate electrode and the wiring for an MOSFET are prepared. CONSTITUTION:Two N<+> type diffusion layers 2 are formed to the surface layer section of a P type Si substrate 1, and thick field oxide films 3 are applied extending over peripheral sections from the surfaces of these layers 2 and a thin gate oxide film 4 on a channel region between these diffusion layers 2. An Al gate electrode 5 is formed on the film 4, but a polycrystalline Si gate electrode 10 is interposed under the gate electrode 5 at that time. When contact holes 7 are bored to the films 3 and Al wirings being in contact with the diffusion layers 2 are applied, a polycrystalline Si wiring 10 is also interposed similarly under the gate electrode 5. Accordingly, the characteristics of an MOSFET are stabilized while the resistance of the electrode is lowered, and the speed of operation is increased. The alloy spike of Al can also be prevented, and dielectric resistance is increased. |
