| 摘要 |
An apparatus and method for treating a surface of a wafer by using a treatment solution includes a wafer rotating device for rotating the wafer in a horizontal plane, and a treatment solution discharge nozzle for continuously discharging the treatment solution at an angle of greater than zero and less than 45 degrees relative to the surface of the rotating wafer. The treatment solution discharged from the treatment solution discharge nozzle impinges upon the surface of the wafer at the point nearer to the edge than to the center and then forms a stable layer of solution on the entire surface of the wafer by making use of its speed and its centrifugal force. Since the layer of the treatment solution has an even thickness over the whole surface of the wafer, the surface of the wafer is treated uniformly. Furthermore, it is easy to optically detect an end of treatment. |
