| 摘要 |
PROBLEM TO BE SOLVED: To realize writing by a plurality of bit units such as byte writing for a memory using the memory cell of a multi-storage shape. SOLUTION: A memory gate electrode (33) is formed through a gate insulation film (31) and a gate nitride film (32) on a first semiconductor area (30), and first and second signal electrodes (38, 39) being first and second switch gate electrodes (36, 37) and a source and drain electrode are formed on both sides. The memory cell injects electrons from the source side to the gate nitride film to perform information storage. Since the memory gate electrode and the switch gate electrode are extended in the same direction, high voltage is applied on the memory gate electrode of the memory cell of a write object making the memory gate electrode and the switch gate electrode common, and even when writing and writing blocking voltage are given through the first and second signal electrodes are given, high electric field application is blocked by the switch gate electrode of a cut-off state in a writing non-selection memory cell. |
