THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD OF CRYSTALLIZATION, APPARATUS FOR CRYSTALLIZATION, THIN-FILM SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain high reliability in the case of forming a semiconductor active device in the range of a large-size single-crystal semiconductor grain as obtained by a phase-modulation excimer laser crystallization method. SOLUTION: The thin-film semiconductor substrate comprises an insulative substrate 10, an amorphous semiconductor thin film 14 formed on the insulative substrate 10, and a plurality of alignment marks MK which are located on the semiconductor thin film 14 and are indicating the reference positions for crystallization. COPYRIGHT: (C)2005,JPO&NCIPI