摘要 |
The present invention generally relates to magnetic devices used in memor y and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, t he present invention is directed to a single ferromagnetic layer device in w hich an electrical current is used to control and change magnetic configurat ions as well as induce high frequency magnetization dynamics. The magnetic l ayer includes full spin-polarized magnetic material, which may also have non ¬ uniform magnetization. The non-uniform magnetization is achieved by varyin g the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as com pact microwave sources, detectors, mixers and phase shifters. |