| 摘要 |
A method of making a luminescent diode comprising providing gallium phosphide substrate having an impurity donor which can be sulfur or tellurium with a melt of gallium-gallium phosphide solution, heating the substrate and said melt to a temperature range to render the melt in solution, and passing a carrier gas of hydrogen containing hydrogen sulfide and ammonia over the melt and substrate so as to grow an epitaxial layer on the substrate from the melt. The method further includes producing a zinc vapor which is supplied over the substrate as the epitaxial layer is grown, so as to produce luminescent diodes having a very high light emitting efficiency. |
