GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PURPOSE:To improve blue light emitting intensity of a light emitting diode made of GaN compound semiconductor. CONSTITUTION:A gallium nitride compound semiconductor light emitting element has an N-type layer made of N-type gallium nitride compound semiconductor (AlXGa1-XN; including X=0) and an I-type layer made of I-type gallium nitride compound semiconductor (AlXGa1-XN; including X=0). The I-type layer is formed sequentially from the side connected to the N-type layer 4 in a double layer structure of a low impurity concentration IL-type layer 5 having a Zn concentration of 1X10<17>-5X10<18>/cm<3> and formed in thickness of 0.5-5mum at a growing temperature of 1000-1200 deg.C and a high impurity concentration IH-type layer 6 having a Zn concentration of 1X10<19>-1X10<21>/cm<3> and formed in thickness of 0.1-1mum at a growing temperature of 800-950 deg.C.