METHOD FOR PROCESSING SEMICONDUCTORS

摘要

A system for diffusion treatment of semiconductor compounds including an open crucible containing a molten bath of treating material and a liquid permeable carrier member for inserting and removing semiconductor slabs from the bath. The bath is isolated from reacting with the atmosphere by slowly flowing an inert gas across the top of the bath. High melting point treating materials such as zinc can be more readily removed from semiconductors such as zinc sulfide by quickly removing the carrier from the zinc bath and inserting the carrier into a bath of a material having a much lower melting point such as indium or gallium. The lower melting material displaces the higher melting material and the lower melting material is then mechanically removed from the slabs while being heated on a hotplate to a temperature above the melting point of the lower melting material.