发明名称 |
Verfahren zur Herstellung eines Feldeffekttransistors |
摘要 |
The insulative gate layer of an insulated gate field effect transistor (IGFET) is made by exposing a channel region of a semiconductor wafer to high energy proton bombardment. The bombardment damages the crystal structure of the semiconductor to a predetermined depth to make that part of the semiconductor nonconductive. |
申请公布号 |
DE2212489(A1) |
申请公布日期 |
1972.10.05 |
申请号 |
DE19722212489 |
申请日期 |
1972.03.15 |
申请人 |
WESTERN ELECTRIC CO.INC. |
发明人 |
CLAYTON NORTH,JAMES;ROGER PRUNIAUX,BERNARD |
分类号 |
H01L21/265;H01L29/51;H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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