| 摘要 |
PURPOSE:To improve phototransformation efficiency and stability in actual operation by forming solar cell element with CdS, TeCd, CuS or SeCu or TeCu. CONSTITUTION:A lattice electrode 2 is formed on glass basic plate 1 and CdS3, TeCd4, CuS5 in thickness of 10mum, 5mum, 5mum respectively are stacked by vacuum evaporation. At this time temperature for forming of TeCd4 is about 250 deg.C and excessed Cd is diffused into TeCd4 to form low resistance film. Ni electrode 6 is disposed on whole surface of CuS5 and lead line 7 is connected thereto and lead line 8 is applied to the electrode 2. Sunlight is applied through the basic plate 1 and then the side of lead line 8 generates positive electromotive force and trnasformation efficiency is more than 10%. The charactristic does not fenerate even after leaving for ten hours at 300 deg.C. |
