| 摘要 |
PURPOSE:To improve the positional accuracy of a pattern by adjusting relative relational position between a master mask and a copy mask by allowing for the deviation of the reference position of the copy mask that arises in the stage of setting the copy mask after printing to a wafer exposing device. CONSTITUTION:A master mask 2 and a copy mask 2' are respectively set on upper and lower stage mask holders 1, 1' of a printer P. The holder 1 on the master mask side is then moved in X-, Y and theta directions, by which the relative relational position between the master mask 2 and the copy mask 2' is adjusted while allowing preliminarily for the deviation DELTAdelta2 of the reference positon of the mask 2' that arises in the stage of setting the mask 2' for exposing after printing to an exposing device and the deviations DELTAdelta1 and DELTAdelta2 are corrected. The deviations DELTAdelta1, and DELTAdelta2 are already corrected in the stage of printing the pattern to the mask 2' by the mask 2 in the above-mentioned way and therefore if the deviation DELTAdelta3 between the pins of both holders of the exposing device E is once corrected prior to staring of exposing a wafer, the patterns of the copy mask and the wafer overlap always on each other. The need for making offset operation with each of the copy masks is thus eliminated. |
