| 摘要 |
PURPOSE:To make the high speed wafer etching process feasible by a method wherein the magnetic field for producing electron cyclotron resonance (ECR) plasma in a magnetic microwave plasma processor is focussed on wafers by means of air-core coils. CONSTITUTION:The space between wafers 8 and a vacuum vessel 16 is impressed with high-frequency electric field by a high-frequency power supply 12 to negative-bias the wafers 8 effectively into plasma 15 for etching process with high anisotropy. When air-core coils 5 indispensable for producing and focusing ECR plasma arc mounted on the same plane as that of wafers 8, the flux density is maximized at wafers 8 while etching speed is also maximized. Finally the DC bias voltage of wafers 8 may be controlled further controlling the anisotropy of etching process since the space between wafers 8 and the vacuum vessel 16 is impressed with high-frequency electric field aside from the plasma production. |
