发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To remove an etching liquid or impurities remaining on the surface of a semiconductor chip completely, and to obtain a semiconductor element excellent in both initial characteristics and reliability by etching the semiconductor chip coupled with a lead by an alkaline liquid and washing the chip by pure water heated at a temperature equal to or higher than the etching liquid. CONSTITUTION:Leads are bonded with a semiconductor chip, and the semiconductor chip is etched by an alkaline liquid, and washed by pure water heated at a temperature equal to or higher than the etching liquid. Devices such as diodes 1 after the leads are fitted to the semiconductor chips are introduced into a washing holder 2, dipped in three bleachers 31, 32, 33 in succession, and washed through rocking or as they are. The insides of each bleacher are filled with pure water, and pure water is heated by heaters 4. The heating temperature of pure water is 100 deg.C-that is, pure water is boiled-when the heating temperature of the alkaline liquid in an etching process is 100 deg.C, and is brought to 70-100 deg.C higher than 60 deg.C when the heating temperature of the alkaline liquid is 60 deg.C.
申请公布号 JPS62144350(A) 申请公布日期 1987.06.27
申请号 JP19850286314 申请日期 1985.12.19
申请人 FUJI ELECTRIC CO LTD 发明人 MORITA YOSHINOBU
分类号 H01L21/306;H01L23/48 主分类号 H01L21/306
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