发明名称 FORMATION RESIN THIN FILM FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce difference in flowability of mold resin by a method wherein a plurality of fine grooves is provided on the surface of a semiconductor device on which a thin film is to be formed. CONSTITUTION:On a thin film forming surface 4a of a semiconductor device 4, a plurality of grooves 6 is provided, and a thin film 5 is thicker at a portion on a groove 6 by the depth of the groove 6. In this example, the particles constituting a mold resin are 0.3mm in diameter while the thin film 5 is 0.5mm in depth; and the groove 6 is 1.0mm in width on the thin film forming surface 4a, 1.2mm in width at the maximum along its bottom, and 0.5-0.6mm in depth, which means that the groove 6 has an inverted-taper cross section. Resin is injected into a cavity 1 at a resin inlet port 2 and the air in the cavity 1 is discharged at an air outlet port 3. In this way, the quantity of mold resin flowing under the semiconductor device 4 increases by the quantity flowing in the groove 6. This reduces difference in flowability of mold resin above and under the semiconductor device 4, lowering the generation of pinholes and breaks in the thin film 5 ascribable to insufficient filling. Accordingly, this design results in a high-quality mold resin thin film.
申请公布号 JPS62287652(A) 申请公布日期 1987.12.14
申请号 JP19860131617 申请日期 1986.06.05
申请人 FUJITSU LTD 发明人 SAKAI HIDEJI
分类号 H01L23/28;H01L23/29;H01L23/36 主分类号 H01L23/28
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