| 摘要 |
An epitaxial wafer of a compound semiconductor, e.g., gallium phosphide or arsenide having an epitaxial layer of a gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from a single epitaxial wafer and increase in the growth rate of the epitaxial layer when the substrate wafer of the compound semiconductor has a crystallographic surface plane which is obtained by inclining the (001) plane in the [110] direction by 8 DEG to 20 DEG or a crystallographically equivalent plane thereto. |
