| 摘要 |
PURPOSE:To reduce a transient loss, a steady loss and a switching loss which are increased due to a high frequency by a method wherein a lateral bipolar transistor is constituted on the surface layer on the side of an emitter for a vertical insulatedgate bipolar transistor and an electrode on the other side is connected to a collector electrode. CONSTITUTION:Only an n-layer 21 is formed on the surface layer of an n<-> layer 1, and an extraction electrode 13 is brought into contact with it. Other parts of an electron current which has flowed into the n<-> layer 1 at a time when an element is turned on are passed through the lower part of an insulating layer 52 from a part directly under a gate oxide film 5, and they flow into the n-layer 21 whose potential is identical to that of a collector electrode 10. That is to say, a lateral-direction insulated-gate bipolar transistor which is formed of an emitter electrode 7, an n<+> emitter layer 3, a p-base layer 2, the gate oxide film 5, a gate electrode 6, the n<-> layer 1, the n-layer 21 and the extraction electrode 13 is connected in parallel with a vertical-direction spnp transistor. Thereby, the operation of a space bipolar transistor is reinforced, and carriers can be pulled out usefully in a turning-off operation. |
