| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a halftone type phase shift mask and a halftone type phase shift mask blank, capable of high precision patterning and having high acid resistance and reliability. SOLUTION: This phase shift mask blank has a transparent substrate 10, a halftone material film 11 laminated on the substrate 10, and a metal film 12 laminated on the film 11. The amount of an etching rate increasing component and/or an etching rate decreasing component in the metal film 12 is stepwise and/or continuously increased and/or decreased from the surface side toward the substrate 10 side, so that the etching rate of the film 12 is stepwise and/or continuously increased from the surface side toward the substrate 10 side.</p> |
