| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for analyzing the periphery of a silicon wafer which can restrict the periphery of the wafer to a necessary range, can analyze it so as not to enlarge an analysis surface area of the wafer periphery, and can also analyze the wafer periphery in its depthwise direction by etching the wafer periphery a plurality of times to a depth of tens of nm to severalμm from the surface of the periphery. SOLUTION: In the method for analyzing the periphery of a silicon wafer by etching the wafer periphery once or a plurality of times, fluorine vapor is blown against the wafer periphery before etching the wafer periphery or during plural-time etching thereof to decompose an oxide film on the wafer periphery and to hydrophobize it. Thereafter, a surface layer of the wafer periphery is immersed into an etching solution once or a plurality of times, and the etching solution is recovered for each immersion. The recovered etching solution is analyzed using a radio frequency inductively-coupled plasma mass spectrometry apparatus or using an atomic absorption spectrophotometer to find the impurity concentration of the predetermined area of the wafer periphery in its depthwise direction. COPYRIGHT: (C)2007,JPO&INPIT
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