| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for stabilizing a surface shape of an upper electrode of a capacitor and a manufacturing method thereof. SOLUTION: The manufacturing method of semiconductor device comprises the steps of forming a first alumina film (under insulating film) 37 on a silicon substrate 20; sequentially forming a first conductive film 41, a ferrodielectric material film 42, and a second conductive film 43 on the first alumina film 37; forming a mask material film 45 on the second conductive film 43; forming an auxiliary mask 45a from the mask material film 45; forming an upper electrode 43a from the second conductive film 43 with the etching for forming the mask from the auxiliary mask 45a and a first resist pattern 46; forming a capacitor dielectric material film 42a by patterning the ferrodielectric material film 42; and forming a lower electrode 41a by pattering the first conductive film 41, and forming a capacitor Q from the lower electrode 41a, capacitor dielectric material film 42a, and upper electrode 43a. COPYRIGHT: (C)2007,JPO&INPIT
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