| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element for suppressing generation of a pinhole-shaped defect on a diffusion layer forming a source and a drain located under a thin insulation layer. SOLUTION: The manufacturing method makes a gate layer thick in a region other than a gate electrode. Even if the gate layer thickness gets uneven due to some factors by making the gate layer thick, and probability drops an etching of semiconductor silicon of a substrate 101 through the gate layer serving as an etch-stop layer of polysilicon, thereby suppressing the generation of the pinhole-shaped defect occurring on the diffusion layer including a region forming the source and the drain. COPYRIGHT: (C)2007,JPO&INPIT
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