| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor for improving the flatness of gm and achieving lower distortion characteristics by minimizing a band gap difference on the interface between n-InGaAs and n-GaAs. SOLUTION: In the field effect transistor, a channel layer 103 comprising n-InGa<SB>1-a</SB>As having an In mixed crystal ratio of (a) (0<a<1) containing impurities is formed on a buffer layer 102 formed on a semi-insulating substrate 101, a channel layer 104 comprising n-GaAs containing impurities is formed on the channel layer 103, and the channel layer 103 comprises a grated structure in which the In mixed crystal ratio (a) is changed slightly upward to the thickness direction. COPYRIGHT: (C)2007,JPO&INPIT
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