| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern having good dimensional uniformity can be formed; and to provide a resist composition used therefor. <P>SOLUTION: The pattern forming method includes: applying on a substrate a composition comprising a compound capable of generating an acid upon irradiation with an actinic ray or radiation, a resin having a rate of dissolution in an alkali developer increased by the action of an acid, a surfactant, and a mixed solvent comprising at least one solvent each selected from the following group A and group B, or at least one solvent each selected from the following group A and group C; adjusting the resultant film to an objective thickness at a revolution speed of 500-1,500 rpm; and carrying out drying, exposure and development. The group A comprises propylene glycol monoalkyl ether carboxylates. The group B comprises propylene glycol monoalkyl ethers, alkyl lactates, acetic esters, chain or cyclic ketones and alkoxyalkyl propionates. The group C comprises γ-butyrolactone, ethylene carbonate and propylene carbonate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
