| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stacked photoelectric conversion device of which the output can be restrained from extremely decreasing in the morning and evening. <P>SOLUTION: The stacked photoelectric conversion device has a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each of which has a pin junction and is made of a silicon-based semiconductor and which are stacked in order from a light incident side, the stacked photoelectric conversion device is characterized in that a short-circuit photocurrent of the first photoelectric conversion layer is larger than one of a short-circuit photocurrent of the second photoelectric conversion layer and a short-circuit photocurrent of the third photoelectric conversion layer under conditions of a xenon lamp as a light source, an irradiance of 100 mW/cm2, an AM of 1.5, and a temperature of 25°C. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
