SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device equipped with an ESD protective circuit which prevents malfunction at the time of power on without using any special fabrication process. Ž<P>SOLUTION: The semiconductor integrated circuit device includes: a diode D1 which is connected forward from an output terminal 200 to the VDD power supply line; a diode D2 which is connected forward from the GND line to the output terminal 200; an NMOS transistor TN11 connected between the VDD power supply line and the GND line; and a PMOS transistor TP11 connected between the gate electrode of the NMOS transistor TN11 and the output terminal 200. The gate electrode of the PMOS transistor TP11 is connected with the VDD power supply line which makes the PMOS transistor TP11 nonconductive during normal operation. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž