发明名称 SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.
申请公布号 US2016163664(A1) 申请公布日期 2016.06.09
申请号 US201615044361 申请日期 2016.02.16
申请人 OLYMPUS CORPORATION 发明人 Migita Chihiro;Ishida Hisashi;Takemoto Yoshiaki
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor substrate in which a plurality of device areas functioning as a semiconductor device are disposed, and an electrode portion including a plurality of electrodes in which electrode bodies are formed on respective electrode pads is formed in each of the plurality of device areas, the method comprising: a device-forming process of forming the plurality of device areas in a substrate section; a first wiring process of forming circuit wirings connected to the device areas; an electrode pad-forming process of forming the electrode pads; a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads; an electrode-forming process of forming the electrode bodies on the electrode pads by electroless plating after the second wiring process; and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.
地址 Tokyo JP