发明名称 |
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF |
摘要 |
A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process. |
申请公布号 |
US2016163664(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201615044361 |
申请日期 |
2016.02.16 |
申请人 |
OLYMPUS CORPORATION |
发明人 |
Migita Chihiro;Ishida Hisashi;Takemoto Yoshiaki |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor substrate in which a plurality of device areas functioning as a semiconductor device are disposed, and an electrode portion including a plurality of electrodes in which electrode bodies are formed on respective electrode pads is formed in each of the plurality of device areas, the method comprising:
a device-forming process of forming the plurality of device areas in a substrate section; a first wiring process of forming circuit wirings connected to the device areas; an electrode pad-forming process of forming the electrode pads; a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads; an electrode-forming process of forming the electrode bodies on the electrode pads by electroless plating after the second wiring process; and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process. |
地址 |
Tokyo JP |